| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1494941 | Optical Materials | 2013 | 4 Pages |
Abstract
Nitrogen (N)-doped ZnO films (ZnO:N) grown on the a-/c-plane sapphire substrates (a-/c-Al2O3) by plasma-assisted molecular beam epitaxy were investigated. It was found that the content of N in the ZnO films grown on c-Al2O3 is higher than that of the films grown on a-Al2O3. The ZnO:N films grown on c-Al2O3 have lower carrier concentration and larger intensity ratio of the DAP/D°X emission compared with those of the ZnO:N films grown on a-Al2O3 under the same growth conditions, which indicates higher incorporation efficiency of N in the ZnO films grown on c-Al2O3.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Wei-Wei Liu, Zhen-Zhong Zhang, Bin Yao, De-Zhen Shen, Cheng-Lin Liu,