Article ID Journal Published Year Pages File Type
1495047 Optical Materials 2012 4 Pages PDF
Abstract
► Ge NCs with size varying from 4 to 7 nm were grown by pulsed laser deposition. ► Effect of Er concentration on 1.54 μm photoluminescence was investigated. ► Increase in photoluminescence intensity with Ge NC size was observed. ► Temperature dependent photoluminescence from Er doped Ge NCs was discussed.
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Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
Preview
Photoluminescence characteristics of Er doped Ge nanocrystals embedded in alumina matrix
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