Article ID Journal Published Year Pages File Type
1495360 Optical Materials 2013 5 Pages PDF
Abstract
► AlxGa1−xN was grown on different GaN templates. ► Better luminescence property is obtained with 1.3 μm-thick GaN template. ► Alloy disorder induces PL peak linewidth increase. ► A bowing parameter of 0.93 eV is obtained. ► Two quenching mechanisms of the donor bound exciton PL-intensity are discussed.
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Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
Preview
Influence of GaN template thickness and morphology on AlxGa1−xN luminescence properties
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