Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1495360 | Optical Materials | 2013 | 5 Pages |
Abstract
⺠AlxGa1âxN was grown on different GaN templates. ⺠Better luminescence property is obtained with 1.3 μm-thick GaN template. ⺠Alloy disorder induces PL peak linewidth increase. ⺠A bowing parameter of 0.93 eV is obtained. ⺠Two quenching mechanisms of the donor bound exciton PL-intensity are discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
I. Halidou, A. Touré, L. Nguyen, A. Bchetnia, B. El Jani,