The electron beam induced short lived absorption in PLZT optical ceramics

The short lived absorption induced by a pulsed electron beam in the led–lanthanum–zirconate–titanate (PLZT) optical ceramics was studied. The measured absorption spectrum covers 1.1–2.9 eV energy range and consists of several strongly overlapping peaks. The rise of the absorption is delayed with respect to the excitation pulse, due to charge carrier migration before trapping at centers responsible for the absorption. The formation rate of absorption centers and decay rate of absorption depend on the photon energy. The kinetics of short lived absorption varies over spectrum and can be approximated with a stretched exponent. The stretched exponent parameters indicate that the local disorder of a matrix is similar around all absorption centers.

► The short lived absorption induced by pulsed electron beam in PLZT ceramics. ► The recharging of existing defects. ► The absorption rise was delayed relative to the pulse of electron beam. ► The approximation of absorption decay with stretched exponent was successful.