Article ID Journal Published Year Pages File Type
1495613 Optical Materials 2011 4 Pages PDF
Abstract

We report on the fabrication and characterization of ambipolar organic field-effect transistors based on the solution-processable quinoidal oligothiophene [QQT(CN)4] and using a new fluorinated polymer (AL-X601) with a dielectric constant of 3.1 as dielectric material layer. As-prepared devices show ambipolar transport with hole and electron field-effect mobilities of 6 × 10−2 and 5 × 10−3 cm2/V s respectively as well as an on and off state current ratio higher than 103. Influence of a thermal annealing on the device performances was investigated and was found to lead to a majority carrier type conversion from a p-type to an n-type dominant behavior. QQT(CN)4 based field-effect transistors and complementary inverters fabricated on flexible substrates and using Al-X601 as gate dielectric material show high performance and good mechanical stability.

Graphical abstractOur work demonstrates the realization of flexible ambipolar organic transistors and inverters using a new fluorinated gate dielectric polymer.Figure optionsDownload full-size imageDownload high-quality image (110 K)Download as PowerPoint slideHighlights► Fabrication of organic transistors using a new gate dielectric polymer. ► A quinoidal oligothiophene derivative was used as organic semiconductor. ► Majority carrier type conversion achieved by simple thermal annealing. ► Realization of flexible organic field-effect transistors and CMOS inverters. ► Very good mechanical stability of the flexible devices upon bending.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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