| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1495875 | Optical Materials | 2010 | 4 Pages |
Abstract
We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH’s), excited by femtosecond laser. Results showed that the terahertz emission from MDH’s can provide information on the GaAs/AlGaAs interface quality while the QD structures have the potential for being intense terahertz emitters; rivaling the emission intensity of p-type bulk InAs.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Satoru Takatori, Pham Hong Minh, Elmer Estacio, Marilou Cadatal-Raduban, Tomoharu Nakazato, Toshihiko Shimizu, Michelle Bailon-Somintac, Armando Somintac, Michael Defensor, Jacqueline Gabayno, Fritz Christian B. Awitan, Rafael B. Jaculbia, Alipio Garcia,