Fabrication of KTa0.65Nb0.35O3 film by pulsed laser deposition on glass substrate with various buffer layers

KTa0.65Nb0.35O3 (KTN) thin films were deposited on amorphous glass substrates using a range of single buffer layers such as indium tin oxide (ITO), zinc oxide (ZnO), 3 at% Al-doped ZnO (AZO), and 3 at% Ga-doped ZnO (GZO), as well as a variety of multi-buffer layers such as SrTiO3 (STO)/ITO, STO/ZnO, STO/AZO, and STO/GZO using a pulsed laser deposition system. All films showed a polycrystalline perovskite phase with the exception of all single buffer layers and STO/ITO multi-buffer layers. The STO buffer layer is important for crystallizing KTN films due to the similar lattice constant and same crystal structure. The optical transmittance of all films exhibited a transmittance ⩾90% in the wavelength range.

► We fabricated KTa0.65Nb0.35O3 (KTN) film on amorphous glass substrates with various buffer layers bypulsed laser deposition. ► The KTN films using multi-buffer layers including the SrTiO3 (STO) layer was obtained crystalline structure. ► The KTN/STO/Al doped ZnO and KTN/STO/Ga doped ZnO films can be suitable candidate as an electro-optic material.