| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1496538 | Optical Materials | 2007 | 4 Pages |
Abstract
The paper reviews the basic aspects of sublimation growth of wide-bandgap semiconductors such as SiC and group-III nitrides. The most significant physical and chemical phenomena underlying the growth are considered: heat and mass transport, sublimation and condensation, heterogeneous chemical reactions, flow through reacting porous medium, thermoelastic stress, and defect generation. State of the art in numerical modeling of sublimation growth is discussed. Modeling is shown to be effective for solving of practically important problems of the process study and optimization.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Alexey V. Kulik,