Structural and optical properties of P-Ga codoping ZnO thin films deposited by magnetron sputtering

The P-Ga codoping ZnO thin films have been prepared on sapphire substrates by magnetron sputtering. Structural, optical and electrical properties of ZnO film were investigated using X-ray diffraction meter, transmittance spectra and resistivity, respectively. The obtained films were polycrystalline with the hexagonal structure, and a preferred orientation (0 0 0 2) with the c-axis perpendicular to the substrates. The ZnO thin films became P- type after annealing. We have observed a room resistivity of 0.37 Ω cm and a carrier concentration of 1.6 × 1018 cm−3 in P-type ZnO film.