Temperature dependence of the band gap, refractive index and single-oscillator parameters of amorphous indium selenide thin films

InSe thin films are obtained by evaporating InSe crystal onto ultrasonically cleaned glass substrates under pressure of ∼10−5 Torr. The structural and compositional analysis revealed that these films are of amorphous nature and are atomically composed of ∼51% In and ∼49% Se. The reflectance and transmittance of the films are measured at various temperatures (300–450 K) in the incident photon energy range of 1.1–2.1 eV. The direct allowed transitions band gap – calculated at various temperatures – show a linear dependence on temperature. The absolute zero value band gap and the rate of change of the band gap with temperature are found to be (1.62 ± 0.01) eV and −(4.27 ± 0.02) × 10−4 eV/K, respectively. The room temperature refractive index is estimated from the transmittance spectrum. The later analysis allowed the identification of the static refractive index, static dielectric constant, oscillator strength and oscillator energy.