Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1497288 | Optical Materials | 2008 | 4 Pages |
Abstract
Photoinduced absorption (PA) upon visible radiation (612 nm) has been studied at the wavelength of 1.55 μm in thin a-Si:H and a-SiC:H films fabricated by plasma enhanced chemical vapour deposition onto silicon wafers. Measurements were carried using a recently described in-guide technique. Several a-Si1−xCx:H/ZnO planar waveguides were fabricated in which the a-Si1−xCx:H cores differ in doping and carbon concentration. The in-guide technique confers high sensitivity to the measurements allowing the collection of data at illumination intensities as low as 150 μW/mm2. The phenomenon is highly enhanced by boron doping and quenched by the presence of carbon in the alloy.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Maria Arcangela Nigro, Massimo Gagliardi, Francesco Giuseppe Della Corte,