Article ID Journal Published Year Pages File Type
1497387 Optical Materials 2007 4 Pages PDF
Abstract

InN epitaxial layers were grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD) at various temperatures. It was found that surfaces of these samples were all reticular and the sample surface became rougher as we increased the growth temperature. It was also found that growth rate increased with increasing growth temperature and the growth rate could reach 470 nm/h for the InN epitaxial layer grown at 675 °C. Furthermore, it was found that we achieved the highest mobility of 1300 cm2/Vs and the lowest carrier concentration of 4.6 × 1018 cm−3 from the InN epitaxial layer grown at 625 °C.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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