| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1497524 | Optical Materials | 2006 | 4 Pages |
Abstract
Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 °C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat–flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of ∼1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jie Liu, Yonggang Wang, Wenmiao Tian, Liyan Gao, Jingliang He, Xiaoyu Ma,