Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1497535 | Optical Materials | 2006 | 4 Pages |
Abstract
An InGaAsP/InGaAsP multiple quantum wells (MQWs) selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition was investigated in this article. A 46 nm photoluminescence peak wavelength shift was obtained with a small mask width variation (15-30 μm). High-quality crystal layers with a photoluminescence (PL) full-width-at-half-maximum (FWHM) of less than 30 meV were achieved. Using novel tapered masks, the transition-effect of the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated with the larger ratio of the mask width divided to the tapered region length.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Q. Zhao, J.Q. Pan, J. Zhang, W. Wang,