Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1497622 | Optical Materials | 2006 | 5 Pages |
Abstract
We review theoretical investigations into the structure and electrical activity of rare-earth dopants in group IV and III–V semiconductors. We find that in Si, rare-earth dopants are electrically active and have a high affinity for complexing with oxygen. In contrast, rare-earth dopants in GaAs and GaN are electrically inactive and require another defect to enable them to act as exciton traps. In further contrast AlN, is distinctive as it possess a deep donor level. The result of complexes of the RE with other defects is discussed along with implications for efficient room temperature luminescence.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
R. Jones,