The microstructure of low dose implanted GaN using Cr, Er, Eu and Yb ions

Low dose rare earth implanted GaN is characterized by high resolution transmission electron microscopy: Cr, Er, Yb and Eu implantation in the range 1013-1014 at./cm2 is investigated. The typical defect structure consists of a damaged layer containing a high density of stacking faults. Various sizes of I1 stacking faults were observed and the occurrence of large I1 faults (up to 200 nm) is correlated with a high threading dislocations density in some of the GaN layers.