Towards epitaxial growth of ErSiO nanostructured crystalline films on Si substrates

ErSiO nanostructured crystalline films were obtained by the self-organization process at above 1200 °C so far. We are studying on the epitaxial growth of ErSiO nanostructured crystalline films on Si substrates with views to reducing the process temperature and controlling the superstructures with layer by layer. In this paper, metal organic molecular beam epitaxy (MOMBE) growth of ErSiO nanostructured crystalline films on 15° off Si(1 0 0) substrates at 900 °C are demonstrated. Tetra ethoxy silane (TEOS) and 2,2,6,6-tetra methyl-3,5-octane dionat erbium (Er(TMOD)3) were used as Si-O and Er-O precursors, respectively. The X-ray diffraction result indicates the crystallization under lower temperature than the self-organization. The PL fine structure of Er-related emissions originated from the crystalline nature was observed in the as-grown ErSiO nanostructured crystalline films at room temperature. Also we discuss the possibility of hetero epitaxial growth of ErSiO nanostructured crystalline films on off-oriented Si(1 0 0) substrates from the results.