Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1497698 | Optical Materials | 2006 | 6 Pages |
Abstract
The Yb:Er co-doped Al2O3 thin film was deposited on oxidized silicon wafers by microwave ECR plasma source enhanced RF magnetron sputtering, and annealed from 800 °C to 1000 °C. The photoluminescence at 1.53 μm of thin film was obtained under room temperature. The mixture phase structure of γ and θ is observed by XRD, and the compositions of the thin film are investigated by EPMA. The maximum PL intensity was achieved with O2:Ar at 1:1, annealing temperature at 900 °C, and experimental ratio of Yb:Er at 1:3.6. The energy transfer mechanism between Er and Yb ions is supported by theoretical analysis and experiment results.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Qi Song, Cheng-Ren Li, Jian-Yong Li, Wan-Yu Ding, Shu-Feng Li, Jun Xu, Xin-Lu Deng, Chang-Lie Song,