Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1498096 | Scripta Materialia | 2016 | 5 Pages |
Abstract
Using molecular dynamics simulations, the formation and growth of stacking fault tetrahedra (SFT) are captured by vacancy cluster diffusion and aggregation mechanisms in Ni. The vacancy-tetrahedron acts as a nucleation point for SFT formation. Simulations show that perfect SFT can grow to the next size perfect SFT via a vacancy aggregation mechanism. The stopping and range of ions in matter (SRIM) calculations and transmission electron microscopy (TEM) observations reveal that SFT can form farther away from the initial cascade-event locations, indicating the operation of diffusion-based vacancy-aggregation mechanism.
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Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Dilpuneet S. Aidhy, Chenyang Lu, Ke Jin, Hongbin Bei, Yanwen Zhang, Lumin Wang, William J. Weber,