| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1498286 | Scripta Materialia | 2014 | 4 Pages |
Abstract
The floating-zone melting method enabled the dispersion of TaC particles in a C40-(Mo0.85Nb0.15)Si2 single crystal. By annealing the C40 crystal, coarse C11b phases were formed around the TaC particles and the precipitation of the D88-(Mo,Nb,Ta)5Si3C phase was also induced, in addition to the development of a C40/C11b lamellar microstructure. Such a microstructure containing TaC particles led to a reduction in the orientation dependence of the fracture toughness of duplex silicide crystals.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Koji Hagihara, Tatsuya Fushiki, Takayoshi Nakano,