Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1498356 | Scripta Materialia | 2014 | 4 Pages |
Abstract
The reaction between an 11 nm Ni(10 at.% Pt) film on a Si substrate has been examined by in situ X-ray diffraction (XRD), atom probe tomography (APT) and transmission electron microscopy (TEM). In situ XRD experiments show the unusual formation of a phase without an XRD peak through consumption of the metal. According to APT, this phase has an Si concentration gradient in accordance with the θ-Ni2Si metastable phase. TEM analysis confirms the direct formation of θ-Ni2Si in epitaxy on Si(1 0 0) with two variants of the epitaxial relationship.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Federico Panciera, Dominique Mangelinck, Khalid Hoummada, Michaël Texier, Maxime Bertoglio, Anthony De Luca, Magali Gregoire, Marc Juhel,