Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1498364 | Scripta Materialia | 2014 | 4 Pages |
Abstract
VO2 thin films grown on SiOx/Si substrates have been characterized at the sub-nanometer level by Cs-corrected scanning transmission electron microscopy along with electron energy loss spectroscopy. Reduced transitional regions of 2–3 nm thick were found at both the surface and the interface, where the vanadium valence progressively changes from +4 to +2. The formation of these nanometer-thick surficial and interfacial layers can be interpreted as a unique case of prewetting, and it explains the degradation of metal-to-insulator transition properties in VO2 thin films.
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Xiaoyan Li, Alexandre Gloter, Hui Gu, Jian Luo, Xun Cao, Ping Jin, Christian Colliex,