| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1498570 | Scripta Materialia | 2014 | 4 Pages |
Abstract
Aluminum-induced heteroepitaxial growth of aluminum gallium phosphide nanocrystals (AlxGal-xP NCs) has been achieved on both silicon substrate and the tips of Al-catalyzed silicon nanowires (Si NWs). Al-induced growth is a silicon complementary metal–oxide-semiconductor compatible solution, and a growth mechanism of AlxGal-xP NCs was proposed. The decrease in structural defects in AlxGal-xP NCs grown heteroepitaxially on Si NWs was confirmed by transmission electron microscopy and Raman spectroscopy.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Qingwei Zhou, Zhang Zhang, Stephan Senz, Fuli Zhao, Lijun Chen, Xubing Lu, Xingsen Gao, Junming Liu,