| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1498617 | Scripta Materialia | 2014 | 4 Pages |
Abstract
We report on the structural and electrical properties of phosphorous-doped ZnSxO1−x films grown by radiofrequency magnetron sputtering. The band gap decreased with increasing sulfur composition in phosphorus-doped ZnSxO1−x films because of the band bowing effect. The conductivity of phosphorus-doped ZnSxO1−x films changed from n-type to p-type, and the p-type doping efficiency of phosphorus in ZnO was increased as the sulfur content in phosphorus-doped ZnSxO1−x was increased.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jang-Won Kang, Yong-Seok Choi, Byeong-Hyeok Kim, Na-Yeong Kim, C.W. Tu, Seong-Ju Park,