| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1498726 | Scripta Materialia | 2013 | 4 Pages |
Abstract
A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Z.B. Chen, W. Lei, B. Chen, Y.B. Wang, X.Z. Liao, H.H. Tan, J. Zou, S.P. Ringer, C. Jagadish,