Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1498780 | Scripta Materialia | 2013 | 4 Pages |
Abstract
A ZnSe layer grown on a GaAs substrate by molecular beam epitaxy has been analysed by atom probe tomography. The one-dimensional concentration profile shows separation between Zn and Se and between Ga and As at the interface. A comparison of the concentration profile with different interface models suggests that the formation of a Ga2 + xSe3 compound at the ZnSe/GaAs interface with fewer vacancies than Ga2Se3 (x = 0.7). These results show the ability of atom probe tomography to characterize the interface at the atomic scale.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
H. Benallali, K. Hoummada, M. Descoins, P. Rueda-Fonseca, L. Gerard, E. Bellet-Amalric, S. Tatarenko, K. Kheng, D. Mangelinck,