Article ID Journal Published Year Pages File Type
1498780 Scripta Materialia 2013 4 Pages PDF
Abstract

A ZnSe layer grown on a GaAs substrate by molecular beam epitaxy has been analysed by atom probe tomography. The one-dimensional concentration profile shows separation between Zn and Se and between Ga and As at the interface. A comparison of the concentration profile with different interface models suggests that the formation of a Ga2 + xSe3 compound at the ZnSe/GaAs interface with fewer vacancies than Ga2Se3 (x = 0.7). These results show the ability of atom probe tomography to characterize the interface at the atomic scale.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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