| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1498788 | Scripta Materialia | 2013 | 4 Pages |
Abstract
We present a defect-level induced by a new rehybridization of broken-bonded GaN in open-core threading edge dislocations (TED) of heteroepitaxial GaN. The rehybridization was discovered toward sp2-/sp3- from the sp2-/p3- of full-core TED by density functional theory calculation. The filled non-bonding state of the nitrogen’s sp3- bond is located in the middle of the band gap, which corresponds to the source of yellow luminescence.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Mino Yang, Jongseob Kim, Jaewoo Lee, Cheol-Woong Yang,