Enhancement of thermoelectric power factor of silicon germanium films grown by electrophoresis deposition

A method based on electrophoresis deposition is demonstrated for making efficient silicon germanium thermoelectric films. The film showed a thermoelectric power factor an order of magnitude larger than the previously reported values. Theoretical modeling of the charge carrier transport showed that the enhancement of power factor is due to the large carrier mobility of the film. The method offers a cost-effective approach extendable to other materials for making efficient miniature thermoelectric devices.