Investigation of antimony diffusion for a local back surface field with laser-fired contacts in crystalline silicon solar cells

We report on a laser-doping process for the formation of a local back surface field with antimony for n-type crystalline silicon solar cells. The local back surface field was formed at low temperature with a laser-fired contact process. A 100 nm thick Sb layer with 44 mW laser power resulted in a junction depth of 500 nm, and a carrier concentration of 5 × 1020 cm−3 yielded the best electrical results, with a current density of 35 mA cm−2 and an efficiency of 17.16%.