| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1498875 | Scripta Materialia | 2013 | 4 Pages |
Abstract
Based on the effective-mass approximation, our calculation shows that for the wurtzite (WZ) In0.2Ga0.8N/InyGa1−yN symmetric staggered quantum well (QW) with In content y > 0.1, the stepped barrier effects are insensible to exciton states. However, for the WZ In0.2Ga0.8N/InyGa1−yN asymmetric staggered QWs, the maximum values of the exciton recombination rate appear when the In0.2Ga0.8N well layer is smaller than the InyGa1−yN layer thickness for In concentrations y < 0.1. The studies are useful in the design of high-performance blue and green light-emitting diodes.
Related Topics
Physical Sciences and Engineering
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Authors
Congxin Xia, Heng Zhang, Yalei Jia, Shuyi Wei, Yu Jia,