In situ growth and ab initio optical characterizations of amorphous Ga3Se4 thin film: A new chalcogenide compound semiconductor thin film

This paper reports the first systematic study of the structural and optical characterization of Ga3Se4 thin film. Powder X-ray diffractometery analysis revealed that the films are amorphous. Optical reflection and transmittance measurements have been done by UV–visible–near-infrared spectrophotometry, and the values of various optical constants, such as the lower cut-off wavelength (550 nm), optical band gap (2.14 eV), dispersive energy (6.75 eV), oscillator energy (2.86 eV), static refractive index (1.83) and static dielectric constant (3.35), have been estimated.