Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1499051 | Scripta Materialia | 2013 | 4 Pages |
Abstract
The effect of grain boundary characteristics on the crystal/melt interface morphology during the unidirectional solidification of multicrystalline Si was studied by in situ observations. It was shown that sharp and smooth grooves were formed at the crystal/melt interfaces at Σ27 and random grain boundaries, whereas no grooves were formed at Σ3 {1 1 1} twin boundaries. We explain the reasons why the grooves form at grain boundaries and discuss the impurity segregation at the grain boundary grooves on the crystal/melt interface.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Kozo Fujiwara, Masaya Ishii, Kensaku Maeda, Haruhiko Koizumi, Jun Nozawa, Satoshi Uda,