Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1499327 | Scripta Materialia | 2012 | 4 Pages |
Abstract
The redistribution of arsenic during the reaction of Ni thin films with arsenic-doped Si(1 0 0) substrates is studied by in situ X-ray diffraction (XRD) and atom probe tomography. In situ XRD showed the formation of a transient phase that forms isolated grains at the δ-Ni2Si/Si interface. Arsenic is not incorporated in δ-Ni2Si but accumulates at the δ-Ni2Si/Si interface. Clusters containing 10 at.% As are present only in the transient phase. The As clustering might have important consequences for devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
K. Hoummada, G. Tellouche, I.D. Blum, A. Portavoce, D. Mangelinck,