| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1499463 | Scripta Materialia | 2011 | 4 Pages |
Abstract
Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.%) silica-gel films (0.13 μm) and vacuum annealed; the strongest emission was obtained at ∼700 °C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er3+ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol–gel films are discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
S. Abedrabbo, B. Lahlouh, S. Shet, A.T. Fiory,