| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1499610 | Scripta Materialia | 2011 | 4 Pages |
Abstract
Si-doped Sb2Te phase-change material was investigated for the application of phase-change memory. During the electrical test, Si0.53Sb2Te needs a lower phase-change operating voltage than Ge2Sb2Te5. For the storage of data for 10 years, Si0.53Sb2Te needs an annealing temperature that is about 24 °C higher than for Ge2Sb2Te5. Crystallization changes from being growth dominated to being nucleation dominated. X-ray diffraction patterns indicate that the polycrystalline SixSb2Te series has a δ-phase with a rhombohedral crystalline structure, similar to the pure Sb2Te.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
Yifeng Gu, Yan Cheng, Sannian Song, Ting Zhang, Zhitang Song, Xuyan Liu, Xiaofeng Du, Bo Liu, Songlin Feng,