Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1499711 | Scripta Materialia | 2011 | 4 Pages |
Abstract
Raman spectroscopy is employed to study both the strain and the carbon substitution level in SiC-doped MgB2 bulk samples. Raman spectroscopy was demonstrated to be a better method to distinguish the individual influences of strain and carbon than standard X-ray diffraction. It is found that the lattice parameter correlation method for C content determination is invalid for highly strained samples. Our result also provides an alternative explanation for lattice variation in non-carbon-doped MgB2, which is basically due to lattice strain.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
W.K. Yeoh, R.K. Zheng, S.P. Ringer, W.X. Li, X. Xu, S.X. Dou, S.K. Chen, J.L. MacManus-Driscoll,