| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1499744 | Scripta Materialia | 2011 | 4 Pages |
Abstract
Sapphire substrates showed nanosized surface pits after the growth of GaN layers using a two-step process by hydride vapor-phase epitaxy. Threading dislocations with Burgers vectors of c and c + a were found to originate from the pits. Cross-sectional transmission electron microscopy observations are used to elucidate the mechanism of dislocation generation.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
F.Y. Meng, I. Han, H. McFelea, E. Lindow, R. Bertram, C. Werkhoven, C. Arena, S. Mahajan,