Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1499764 | Scripta Materialia | 2011 | 4 Pages |
Abstract
The crystallization temperature of GeTe film increases markedly from 187 to 372 °C as a result of 9.81 at.% nitrogen doping, and a rhombohedral–rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 105 cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 °C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Cheng Peng, Liangcai Wu, Feng Rao, Zhitang Song, Xilin Zhou, Min Zhu, Bo Liu, Dongning Yao, Songlin Feng, Pingxiong Yang, Junhao Chu,