| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1499996 | Scripta Materialia | 2011 | 4 Pages |
Abstract
Wafer bonding using Al–Ge eutectic alloy was developed for the microelectromechanical system package. During bonding, Al–Ge eutectic melting primarily occurred, with an active involvement of poly-Si. Bonding microstructure consists of Al layer and Si–Ge–Al alloy layer, corresponding to the crystal structure and bonding geometry. Active reaction ensures the strong chemical bonding and reliable hermetic sealing. At the higher bonding pressure, the microstructure was slightly modified. Shear test showed a direct correlation between bonding strength and bonding pressure.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Woo-Tae Park, Jin-Wook Jang, Troy Clare, Lianjun Liu,