Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1500034 | Scripta Materialia | 2012 | 4 Pages |
Abstract
By combining the doping process of Al alloying with the higher solubility of B in Si, a B/Al co-doped shallow back-surface field (B/Al-BSF) layer was created for fabrication of Si solar cells. The increased carrier concentration in the B/Al-BSF facilitates the modulation of BSF strength. The back-surface recombination velocity exhibits a U-shape function of carrier concentration, and reaches a minimum at a carrier concentration of 1019 cm−3. As a result, the solar cell efficiency can be improved by 0.5%.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Xin Gu, Xuegong Yu, Deren Yang,