| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1500059 | Scripta Materialia | 2011 | 4 Pages |
Abstract
The influence of hydrogenation on the electrical characteristics of an Fe-contaminated grain boundary (GB) formed by direct silicon bonding technology has been investigated. Due to hydrogen passivation, the density of GB states is reduced by one order of magnitude, but the energy distribution of deep levels and corresponding carrier capture cross-sections cannot be significantly affected. It is believed that the efficiency of hydrogen passivation is strongly dependent on the form of Fe contaminants at the GB.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Xuegong Yu, Xiaoqiang Li, Dong Lei, Deren Yang, George Rozgonyi,