| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1500178 | Scripta Materialia | 2011 | 4 Pages |
Epitaxial Ti3SiC2(0 0 0 1) films were deposited on 4° off-cut 4H-SiC(0 0 0 1) wafers using magnetron sputtering. A lateral step-flow growth mechanism of the Ti3SiC2 was discovered by X-ray diffraction, elastic recoil detection analysis, atomic force microscopy and electron microscopy. Helium ion microscopy revealed contrast variations on the Ti3SiC2 terraces, suggesting a mixed Si and Ti(C) termination. Si-rich growth conditions results in Ti3SiC2 layers with pronounced {112¯0} faceting and off-oriented TiSi2 crystallites, while stoichiometric growth yields truncated {11¯00} terrace edges.
► Epitaxial growth of Ti3SiC2(0 0 0 1) on 4H-SiC(0 0 0 1) using magnetron sputtering. ► Ti3SiC2 grows by a lateral step-flow growth on the basal planes. ► Helium ion microscopy discerns differences in the chemical termination of Ti3SiC2 · Ti3SiC2(0 0 0 1) terraces exhibit mixed {11¯00} and {112¯0} ledges.
