| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1500259 | Scripta Materialia | 2011 | 4 Pages |
Abstract
We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Ya-Chu Yang, Chun-Huei Tsau, Jien-Wei Yeh,