Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1500296 | Scripta Materialia | 2009 | 4 Pages |
Abstract
A dual-timescale model of stressed solid-phase epitaxial growth is developed to provide a basis for the atomistic interpretation of experiments where the macroscopic growth velocity of (0 0 1) Si was studied as a function of uniaxial stress applied in the plane of the growth interface. The model builds upon prior empirical modeling, but is a significant improvement as it provides solid physical bases as to the origin of growth being dual-timescale and more accurately models growth kinetics.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
N.G. Rudawski, K.S. Jones,