Article ID Journal Published Year Pages File Type
1500296 Scripta Materialia 2009 4 Pages PDF
Abstract

A dual-timescale model of stressed solid-phase epitaxial growth is developed to provide a basis for the atomistic interpretation of experiments where the macroscopic growth velocity of (0 0 1) Si was studied as a function of uniaxial stress applied in the plane of the growth interface. The model builds upon prior empirical modeling, but is a significant improvement as it provides solid physical bases as to the origin of growth being dual-timescale and more accurately models growth kinetics.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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