Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1500323 | Scripta Materialia | 2010 | 4 Pages |
Abstract
Crack-free interfaces can be achieved in wafer-bonded Ge/Si by using patterned grooves. Using synchrotron radiation phase-contrast imaging and scanning electron microscopy, we observe cracking that is induced by thermal stresses in thin (hGe ⩽ 0.5hSi) Ge wafers on smooth Si substrates. Theoretical calculation shows a remarkable reduction in thermal stresses in Ge wafer bonded to grooved Si substrate. We demonstrate the fabrication of crack-free Ge/Si (hGe = 0.5hSi) structure by patterned grooves, as confirmed by an ohmic I–V characteristic across the heterojunction.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
T.S. Argunova, M.Yu. Gutkin, L.S. Kostina, I.V. Grekhov, E.I. Belyakova, J.H. Je,