Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1500402 | Scripta Materialia | 2011 | 4 Pages |
Abstract
The formation mechanism of twin boundaries in multicrystalline Si was studied using an in situ observation technique. We directly observed the growing interface and analyzed change in the growth rate. We found that the formation of twin boundaries in crystal grains was always accompanied by a marked increase in the growth rate and they were rarely formed when the growth rate was constant at a high value. The formation mechanism is discussed from the viewpoint of driving force.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Kentaro Kutsukake, Takuro Abe, Noritaka Usami, Kozo Fujiwara, Kohei Morishita, Kazuo Nakajima,