Buffering effect on physical properties of transparent BaTiO3 capacitors on composite transparent electrodes

Highly transparent BaTiO3 thin films were prepared on 3 nm thick LaNiO3-buffered (2 2 2)-oriented Zr-doped In2O3 (180 nm)/ZnO (100 nm)/glass substrates by radiofrequency magnetron sputtering at 500-700 °C. All the multilayered films exhibited excellent optical transmittance of ∼75% in the visible light region. The growth of the BaTiO3 film with a LaNiO3 buffer promotes the appearance of (0 0 l)-crystallographic features. The dielectric constant of the BaTiO3 thin films increased, and the leakage current decreased with the buffering of LaNiO3.