| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1500495 | Scripta Materialia | 2011 | 4 Pages |
Abstract
B redistribution in a B-implanted polycrystalline NiSi layer has been investigated using atom probe tomography and secondary ion mass spectrometry. The B accumulations observed at the SiO2/NiSi interface and in the NiSi bulk are due to B clustering. B cluster formation at these two locations is shown to have a major impact upon the entire B distribution observed after annealing. The formation of B clusters in the NiSi bulk may be due to implantation-related defects.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
A. Portavoce, I. Blum, D. Mangelinck, K. Hoummada, L. Chow, V. Carron, J.L. Lábár,