Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1500660 | Scripta Materialia | 2011 | 4 Pages |
Abstract
A self-formed nanonetwork meshed Pt layer formed on the epitaxial (0 0 0 1) GaN substrate upon thermal annealing. Electron backscatter diffraction analysis shows that, while the meshed Pt layer was forming on the GaN surface, Pt atoms rearranged themselves in a (1 1 1)-preferred orientation on (0 0 0 1) GaN. The (1 1 1) Pt/(0 0 0 1) GaN interface represents the most energy-favored stacking configuration. This unique meshed Pt layer demonstrates a relatively high transmittance in visible range, which can be used as a high-reflectivity/low-resistance p-GaN contact for high-power LEDs.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
C.Y. Liu, C.C. Chang, Y.J. Chen, P.H. Chen,