Effects of Mg content on dark-line defects in II-VI green converters

State-of-the-art green emission efficiency is achieved with CdMgZnSe color-converting heterostructures. A unique dark-line defect formation mechanism is revealed in CdMgZnSe green converters. Stacking faults extend horizontally inside the Mg-rich window layers, and partial dislocations associated with stacking faults give rise to dark lines. Such a mechanism indicates the low stacking-fault energy of the MgSe-containing alloys and suggests that, in addition to misfit strain, Mg content also plays an important role in defect formation in II-VI semiconductors.